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1

Resection of the rectum and total excision of the internal anal sphincter with smooth muscle plasty and colonic pouch for treatment of ultralow rectal carcinoma

G. I. Vorobiev, T. S. Odaryuk, P. V. Tsarkov, A. I. Talalakin, E. G. Rybakov

Journal:

British Journal of Surgery

Year:

2004

Language:

english

File:

PDF, 348 KB

english, 2004

2

Formation and properties of impurity band in n-type GaAs

O.V. Emelianenko, T.S. Lagunova, D.N. Nasdelov, G.N. Talalakin

Journal:

Solid State Communications

Year:

1965

Language:

english

File:

PDF, 116 KB

english, 1965

3

Midwave (3–4 μm) InAsSbP/InGaAsSb infrared diode lasers as a source for gas sensors

M. Aidaraliev, N.V. Zotova, S.A. Karandashov, B.A. Matveev, N.M. Stus', G.N. Talalakin

Journal:

Infrared Physics & Technology

Year:

1996

Language:

english

File:

PDF, 218 KB

english, 1996

4

Tunable mid-IR diode lasers based on InGaAsSb/InAsSbP DH

N.V. Zotova, S.A. Karan-ov, B.A. Matveev, N.M. Stus', G.N. Talalakin, M.A. Remennyi

Journal:

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Year:

1996

Language:

english

File:

PDF, 322 KB

english, 1996

5

InAs-based laser double heterostructures with p-n junction in the active region

M.S. Bresler, O.B. Gusev, N.V. Zotova, M. Aydaraliev, S.A. Karandashev, B.A. Matveev, N.M. Stus', G.N. Talalakin

Journal:

Optical Materials

Year:

1996

Language:

english

File:

PDF, 407 KB

english, 1996

6

Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3–4.3 μm spectral range

M.A. Remennyi, N.V. Zotova, S.A. Karandashev, B.A. Matveev, N.M. Stus’, G.N. Talalakin

Journal:

Sensors and Actuators B: Chemical

Year:

2003

Language:

english

File:

PDF, 198 KB

english, 2003

7

Mid-infrared (3-5 μm) LEDs as sources for gas and liquid sensors

B.A. Matveev, G.A. Gavrilov, V.V. Evstropov, N.V. Zotova, S.A. Karandashov, G.Yu. Sotnikova, N.M. Stus', G.N. Talalakin, J. Malinen

Journal:

Sensors and Actuators B: Chemical

Year:

1997

Language:

english

File:

PDF, 599 KB

english, 1997

8

Room temperature InAs photodiode–InGaAs LED pairs for methane detection in the mid-IR

B. Matveev, M. Aidaraliev, G. Gavrilov, N. Zotova, S. Karandashov, G. Sotnikova, N. Stus’, G. Talalakin, N. Il’inskaya, S. Aleksandrov

Journal:

Sensors and Actuators B: Chemical

Year:

1998

Language:

english

File:

PDF, 150 KB

english, 1998

9

Spontaneous and stimulated emission from InAsSbP/InAs heterostructures

M. Aidaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin

Journal:

physica status solidi (a)

Year:

1989

Language:

english

File:

PDF, 166 KB

english, 1989

10

Dependence of the Thermal E.M.F. on the Hole Concentration in Gallium Arsenide Crystals

O. V. Emelyanenko, F. P. Kesamanly, D. N. Nasledov, V. G. Sidorov, G. N. Talalakin

Journal:

physica status solidi (b)

Year:

1965

Language:

english

File:

PDF, 171 KB

english, 1965

11

Effective Mass of Electrons in n-GaAs

O. V. Emelyanenko, D. N. Nasledov, V. G. Sidorov, V. A. Skripkin, G. N. Talalakin

Journal:

physica status solidi (b)

Year:

1965

Language:

english

File:

PDF, 116 KB

english, 1965

12

InGaAsSb negative luminescent devices with built-in cavities emitting at 3.9 μm

M.A. Remennyi, B.A. Matveev, N.V. Zotova, S.A. Karandashev, N. M. Stus’, G.N. Talalakin

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2004

Language:

english

File:

PDF, 284 KB

english, 2004

13

Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral intervalλ=3–5 µm

N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

1999

Language:

english

File:

PDF, 62 KB

english, 1999

14

Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-µm spectral range

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

1999

Language:

english

File:

PDF, 112 KB

english, 1999

15

Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

1999

Language:

english

File:

PDF, 101 KB

english, 1999

16

Light emitting diodes for the spectral range of λ=3.3–4.3 μm fabricated from the InGaAs-and InAsSbP-based solid solutions: Electroluminescence in the temperature range of 20–180°C

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

2000

Language:

english

File:

PDF, 74 KB

english, 2000

17

Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0–3.6 µm)

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, T. Beyer, R. Brunner

Journal:

Year:

2000

Language:

english

File:

PDF, 87 KB

english, 2000

18

InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0–3.3 µm) for diode laser spectroscopy

M. Aidaraliev, T. Beyer, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

2000

Language:

english

File:

PDF, 80 KB

english, 2000

19

Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures

N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Technical Physics Letters

Year:

1997

Language:

english

File:

PDF, 60 KB

english, 1997

20

Fiber-optic detector using a mid-infrared diode laser and an acoustooptic modulator

N. V. Zotova, S. A. Karandashev, L. A. Kulakova, B. A. Matveev, B. T. Melekh, N. M. Stus’, G. N. Talalakin

Journal:

Technical Physics Letters

Year:

1997

Language:

english

File:

PDF, 52 KB

english, 1997

21

Long-wavelength uncooled sources of λ=5–6μradiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Technical Physics Letters

Year:

1998

Language:

english

File:

PDF, 75 KB

english, 1998

22

Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6μm) made from InGaAsSb/InAsSbP double heterostructures

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remenny, N. M. Stus’, G. N. Talalakin

Journal:

Technical Physics Letters

Year:

1998

Language:

english

File:

PDF, 90 KB

english, 1998

23

Negative luminescence inp-InAsSbP/n-InAs diodes

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

2001

Language:

english

File:

PDF, 78 KB

english, 2001

24

Optically pumped mid-infrared InGaAs(Sb) LEDs

N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov

Journal:

Year:

2001

Language:

english

File:

PDF, 56 KB

english, 2001

25

Light emitting diodes for the spectral range λ=3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20–180°C (Part 2)

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

2001

Language:

english

File:

PDF, 107 KB

english, 2001

26

High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm)

M. Aydaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

2001

Language:

english

File:

PDF, 70 KB

english, 2001

27

Radiative recombination via direct optical transitions in In1 −xGaxAs (0≤x≤0.16) solid solutions

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

2001

Language:

english

File:

PDF, 49 KB

english, 2001

28

Optically pumped “immersion-lens” infrared light emitting diodes based on narrow-gap III–V semiconductors

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

2002

Language:

english

File:

PDF, 58 KB

english, 2002

29

Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov, E. A. Kognovitskaya

Journal:

Year:

2002

Language:

english

File:

PDF, 71 KB

english, 2002

30

Two-wavelength emission from a GaInPAsSb/InAs structure with a broken-gap isotype heterojunction and ap-njunction in the substrate

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov

Journal:

Technical Physics Letters

Year:

2002

Language:

english

File:

PDF, 42 KB

english, 2002

31

Negative luminescence at 3.9 µm in InGaAsSb-based diodes

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

2003

Language:

english

File:

PDF, 61 KB

english, 2003

32

InAsSbP-InAs LEDs for the 3.3-5.5 μm spectral range

Matveev, B., Zotova, N., Karandashov, S., Remennyi, M., Il'inskaya, N., Stus', N., Shustov, V., Talalakin, G., Malinen, J.

Journal:

IEE Proceedings - Optoelectronics

Year:

1998

Language:

english

File:

PDF, 327 KB

english, 1998

33

Towards longwave (5-6 μm) LED operation at 80°C: injection or extraction of carriers?

Matveev, B.A., Zotova, N.V., Karandashev, S.A., Remennyi, M.A., Stus, N.M., Talalakin, G.N.

Journal:

IEE Proceedings - Optoelectronics

Year:

2002

Language:

english

File:

PDF, 336 KB

english, 2002

34

Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3-μm spectral region

Matveev, B.A., Aydaraliev, M., Zotova, N.V., Karandashov, S.A., Il'inskaya, N.D., Remennyi, M.A., Stus', N.M., Talalakin, G.N.

Journal:

IEE Proceedings - Optoelectronics

Year:

2003

Language:

english

File:

PDF, 244 KB

english, 2003

35

[IEEE CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715) - Alushta, Crimea, Ukraine (16-20 Sept. 2003)] Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715) - 3.4 μm "flip-chip" LEDs for fiber optic liquid sensing

Matveev, B.A., Zotova, N.V., Karandashev, S.A., Remennyi, M.A., Stus, N.M., Talalakin, G.N.

Year:

2003

Language:

english

File:

PDF, 215 KB

english, 2003

36

[IEEE Proceedings of European Meeting on Lasers and Electro-Optics - Hamburg, Germany (1996.09.8-1996.09.13)] Proceedings of European Meeting on Lasers and Electro-Optics CLEOE-96 - Midwave Two-Wavelength Radiation from Tunable InAsSb(InAs)InAsSbP DH Diode Lasers

Zotova, N.V., Karandashov, S.A., Matveev, B.A., Stus, N.M., Talalakin, G.N.

Year:

1996

Language:

english

File:

PDF, 102 KB

english, 1996

37

6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm

Aydaraliev, M., Zotova, N. V., Karandashov, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Bewley, W. W., Lindle, J. R., Meyer, J. R.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 242 KB

english, 2002

38

[IEEE CLEO/Europe Conference on Lasers and Electro-Optics - Glasgow, Scotland (14-18 September 1998)] CLEO/Europe Conference on Lasers and Electro-Optics - InAsSbP/InAs LEDs for the 3.3-5.3 μm Spectral Range

Matveev, B., Zotova, N., Karandashov, S., Remennyi, M., Il'inskaya, N., Stus, N., Shustov, V., Talalakin, G., Malinen, J.

Year:

1998

Language:

english

File:

PDF, 94 KB

english, 1998

39

Towards efficient mid-IR LED operation: optical pumping, extraction or injection of carriers?

MATVEEV, B. A., ZOTOVA, N. V., IL'INSKAYA, N. D., KARANDASHEV, S. A., REMENNYI, M. A., STUS', N. M., TALALAKIN, G. N.

Journal:

Journal of Modern Optics

Year:

2002

Language:

english

File:

PDF, 2.88 MB

english, 2002

40

[IEEE Conference Digest 2000 Conference on Lasers and Electro-Optics Europe - Nice, France (10-15 Sept 2000)] Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505) - InGaAsSb(Gd)/InAsSbP double heterostructure lasers λ=3.0-3.3 μm for diode laser spectroscopy

Zotova, N.V., Aidaraliev, M., Beyer, T., Karandashov, S.A., Matveev, B.A., Remenny, M.A., Stus, N.M., Talalakin, G.N.

Year:

2000

Language:

english

File:

PDF, 94 KB

english, 2000

41

[IEEE Proceedings of European Meeting on Lasers and Electro-Optics - Hamburg, Germany (1996.09.8-1996.09.13)] Proceedings of European Meeting on Lasers and Electro-Optics CLEOE-96 - Acoustooptic Modulator for Fibre Optic Gas Sensor Based on Midwave InGaAsSb/InAsSbP Diode Laser

Kulakova, L.A., Zotova, N.V., Karandashov, S.A., Matveev, B.A., Melekh, B.T., Stus, N.M., Talalakin, G.N.

Year:

1996

Language:

english

File:

PDF, 87 KB

english, 1996

42

SPIE Proceedings [SPIE Symposium on Integrated Optoelectronic Devices - San Jose, CA (Friday 18 January 2002)] Photodetector Materials and Devices VII - Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 μm

Matveev, Boris A., Zotova, Nonna V., Karandashev, Sergey A., Remennyi, Maxim A., Stus', Nikolai M., Talalakin, Georgii N., Brown, Gail J., Razeghi, Manijeh

Year:

2002

Language:

english

File:

PDF, 145 KB

english, 2002

43

Distribution of Defects in InAs1-x-ySbxPy-InAs DHs

Argunova, T.S., Kyutt, R.N., Matveev, B.A., Ruvimov, S.S., Stus', N.M., Talalakin, G.N.

Journal:

Solid State Phenomena

Year:

1991

File:

PDF, 387 KB

1991

44

SPIE Proceedings [SPIE Photonics China '96 - Beijing, China (Monday 4 November 1996)] Fiber Optic Sensors V - Si-Te acousto-optic modulator for fiber optic gas sensor based on midwave InGaAsSb/InAsSbP diode laser

Kulakova, L. A., Zotova, Nonna V., Karandashev, Sergey A., Matveev, Boris A., Melekh, B. T., Stus', Nikolai M., Talalakin, Georgii N., Yakhkind, E. Z., Bennett, Kim D., Kim, Byoung Yoon, Liao, Yanbiao

Year:

1996

Language:

english

File:

PDF, 146 KB

english, 1996

45

Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys

Aydaraliev, M, Zotova, N V, Karandashov, S A, Matveev, B A, Stus', N M, Talalakin, G N

Journal:

Semiconductor Science and Technology

Year:

1993

Language:

english

File:

PDF, 385 KB

english, 1993

46

SPIE Proceedings [SPIE European Symposium on Optics for Environmental and Public Safety - Munich, Germany (Monday 19 June 1995)] Air Pollution and Visibility Measurements - Midwave (3-5 um) III-V infrared LEDs and diode lasers as a source for gas sensors

Matveev, Boris A., Aidaraliev, M., Zotova, Nonna V., Karandashev, Sergey A., Stus', Nikolai M., Talalakin, Georgii N., Fabian, Peter, Klein, Volker, Tacke, Maurus, Weber, Konradin, Werner, Christian

Year:

1995

Language:

english

File:

PDF, 307 KB

english, 1995

47

Radiation recombination in InAsSb/InAsSbP double heterostructures

Aydaraliev, M, Bresler, M S, Gusev, O B, Karandashov, S A, Matveev, B A, Stus, M N, Talalakin, G N, Zotova, N V

Journal:

Semiconductor Science and Technology

Year:

1995

Language:

english

File:

PDF, 371 KB

english, 1995

48

SPIE Proceedings [SPIE Symposium on Integrated Optics - San Jose, CA (Saturday 20 January 2001)] Light-Emitting Diodes: Research, Manufacturing, and Applications V - III-V optically pumped mid-IR LEDs

Matveev, Boris A., Zotova, Nonna V., Karandashev, Sergey A., Remennyi, Maxim A., Stus', Nikolai M., Talalakin, Georgii N., Yao, H. Walter, Schubert, E. F.

Year:

2001

Language:

english

File:

PDF, 151 KB

english, 2001

49

InAs and InAsSb LEDs with built-in cavities

Aidaraliev, M, Zotova, N V, Il inskaya, N D, Karandashev, S A, Matveev, B A, Remennyi, M A, Stus , N M, Talalakin, G N

Journal:

Semiconductor Science and Technology

Year:

2003

Language:

english

File:

PDF, 129 KB

english, 2003

50

LPE Growth and Characterization of InAsSbP/In1-x GaxAs1-ySby /InAsSbP (X≥O,Y≥O) Heterostructures for Long Wavelength ( λ>3μm) Leds and Lasers.

Aydaraliev, M., Argunova, T.S., Zotova, N.V., Karandashov, S.A., Kutt, R.N., Matveev, B.A., Ruvimov, S.S., Sorokin, L.M., Stus', N.M., Talalakin, G.N., Ioffe, A.F.

Journal:

MRS Proceedings

Year:

1990

Language:

english

File:

PDF, 203 KB

english, 1990

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